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Creators/Authors contains: "Gegechkori, Nikoloz"

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  1. ; ; ; ; ; ; ; ; ; ; et al (, Graphene and 2D Materials)
    Free, publicly-accessible full text available April 1, 2026
  2. ; ; ; ; ; ; ; ; (, Proc. SPIE 12683, Terahertz Emitters, Receivers, and Applications XIV, 126830B (4 October 2023))
    Razeghi, Manijeh; Jarrahi, Mona (Ed.)
    GeS and GeSe are 2D semiconductors with band gaps in the near infrared and predicted high carrier mobility. We find that excitation with 800 nm pulses results in long-lived free photocarriers, persisting for hundreds of picoseconds, in GeS and GeSe noribbons. We also demonstrate that zerovalent Cu intercalation is an effective tool for tuning the photoconductive response. Intercalation of ~ 3 atomic % of zerovalent Cu reduces the carrier lifetime in GeSe and GeS. In GeS, it also shortens the photoconductivity rise and improves carrier mobility. 
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